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| LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network * * Applications Inverter, Interface, Driver 3 LDTC123TLT1G Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. We declare that the material of product compliance with RoHS requirements. 1 2 SOT-23 * Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 -55 to +150 Unit V V V mA mW C C 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device LDTC123TLT1G LDTC123TLT1G Marking N19 N19 R1 (K) 2.2 2.2 R2 (K) Shipping 3000/Tape & Reel 10000/Tape & Reel Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. 50 50 5 - - - 100 1.54 - Typ. - - - - - - 250 2.2 250 Max. - - - 0.5 0.5 0.3 600 2.86 - Unit V V V A A V - k MHz Conditions IC=50A IC=1mA IE=50A VCB=50V VEB=4V IC/IB=5mA/0.25mA IC=1mA , VCE=5V - VCB=10V , IE= -5mA , f=100MHz Input resistance Transition frequency Characteristics of built-in transistor. 1/3 LESHAN RADIO COMPANY, LTD. LDTC123TLT1G Electrical characteristic curves 1k 500 VCE=5V DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100C 25C -40C COLLECTOR CURRENT : IC (A) Fig.1 DC Current gain vs. Collector Current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 500m IC/IB=10 200m 100m 50m Ta=100C 25C -40C 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. Collector Current 2/3 LESHAN RADIO COMPANY, LTD. LDTC123TLT1G SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 C D H K 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3 |
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